CBRAM non-volatile novel devices : endurance and retention characterization

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Sponsoring College, Department, School or Center: 
Faculty Name: 
Dr. Yago Gonzalez Velo
Preferred Skills or Majors: 

Student major: Material Science or EE. Level: junior or senior

Closing Date: 
December 1, 2021
Location or Campus: 
Tempe Campus: ERC and ECG buildings
Hours Per Week: 
5 to 7 depending on skills of students

Desired Academic Year: 
Project Description: 

There is an opportunity to participate in a research effort to characterize novel memory devices. The characterization that needs to be conducted is electrical characterization (i.e. electrical testing) of laboratory based devices that are intended are replacing common non volatile memory devices such as the ones you can find in USB flash drives (flash based technology). We are targeting tests of endurance (how many write/erase operations can be performed) as well as tests of retention (how long the information is retained in the devices). The test will be conducted in a lab on campus using tools typical of the ones encountered at large semiconductor lab/factories. If you are interest in understanding the semiconductor industry, or interest in jobs in the semiconductor industry, this is an opportunity that will open door in that area. Time commitment per week: 6 to 7 hours. Possibility to target FURI project and using this work for a Honors Thesis is encouraged.

Application Instructions and Contact Info: 

Please Contact: Dr. Yago Gonzalez Velo yago.gonzalezvelo@asu.edu and CC Pr. Michael Kozicki Michael.Kozicki@asu.edu Send a CV as well as a short letter/statement of interest introducing yourself and your motivation. Positions: 2 or more